A Compact Amorphous In Ga Zn Oxide Thin Film Transistor Pixel Circuit with Two Capacitors for Active Matrix Micro Light Emitting Diode Displays
نویسندگان
چکیده
In this paper, we propose a novel amorphous In-Ga-Zn-oxide (a-IGZO) thin film transistor (TFT) pixel circuit for pulse width modulation (PWM) driving active matrix micro light-emitting diode (μLED) displays. The proposed compensates wavelength shifts according to gray level and threshold voltage (VTH) variation of TFTs with only two capacitors. This compact operation can be achieved by simultaneous compensation VTH along data input in the constant current generation (CCG) PWM circuit, which consist pixel. Since is compensated, supply uniform stable μLED throughout all levels. accuracy was verified HSPICE an oxide TFT model based on measurement data. addition, analyzed optimization method improve controlling electrical properties TFT, approach simulation.
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2023
ISSN: ['2168-6734']
DOI: https://doi.org/10.1109/jeds.2023.3261275